In uence of Annealing on the Optical and Electrical Properties of Multilayered InAs/GaAs Quantum Dots
نویسنده
چکیده
The characteristics of multi-layered InAs/GaAs self assembled quantum dots (SAQDs) annealed after the growth were here studied using a combination of capacitance-voltage (C-V) measurements, Raman scattering and photoluminescence (PL) spectroscopy. The combination of the results obtained with the three techniques, gave evidences that the annealing at 500oC causes the sharpness of the SAQDs interfaces, while the annealing at 600oC eliminated the SAQDs. However, the comparison with the case of single layered SAQDs, revealed a thermal stability of the last system even at an annealing temperature of 700oC, thus con rming the role of the interlayer strain in the low temperature di usion process.
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Effects of Annealing on Electrical and Optical Properties of a Multilayer InAs/GaAs Quantum Dots System
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